unisonic technologies co., ltd 7n10 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-394.d 7 amps, 100 volts n-channel power mosfet ? description the utc 7n10 is an n-channel enhancement mode power fet, providing customers with excellent switching performance and minimum on-state resistance. the utc 7n10 uses planar stripe and dmos technology to provide perfect quality. this device can also withstand high energy pulse in the avalanche and the commutation mode. the utc 7n10 is generally applied in low voltage applications, such as dc motor controls, audio amplifiers and high efficiency switching dc/dc converters,. ? features * low gate charge: 5.8 nc (typ.) * low c rss: 10 pf (typ.) * 7a, 100v, r ds(on) = 0.35 ? @v gs = 10 v * fast switching * improved dv/dt capability ? symbol (2)d (3)s (1) g ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 7n10l-aa3-r 7n10g-aa3-r sot-223 g d s tape reel 7n10l-tn3-r 7N10G-TN3-R to-252 g d s tape reel
7n10 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-394.d ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain -source voltage v dss 100 v gate-source voltage v gss 25 v t c =25c i d 7 a continuous drain current t c = 70c i d 6.8 a pulsed drain current (note 2) i dm 16 a avalanche current (note 2) i ar 7 a repetitive avalanche energy (note 2) e ar 0.2 mj single pulsed avalanche energy (note 3) e as 50 mj peak diode recovery dv/dt (note 4) dv/dt 6.0 v/ns sot-223 2.0 t c =25c to-252 2.5 w sot-223 0.016 power dissipation derate above 25c to-252 p d 0.02 w/c operating junction temperature t j -55 ~ +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. 4. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. repetitive rating : pulse width limited by maximum junction temperature l =26mh, i as =1.7a, v dd =25v, r g =25 ? starting t j =25c i sd 7.3a, di/dt 300a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit sot-223 62.5 junction to ambient to-252 ja 50 c/w note: when mounted on the minimum pad size recommended (pcb mount) ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 100 v breakdown voltage temperature coefficient bv dss / t j reference to 25c ,i d =250a 0.1 v/c v ds =100v, v gs =0v 1 a drain-source leakage current i dss v ds =80v, t c =125c 10 a gate-source leakage current i gss v gs =25v, v ds =0v 100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v, i d =3.5a 0.28 0.35 ? forward transconductance g fs v ds =40v, i d =0.85a(note 1) 1.85 s dynamic parameters input capacitance c iss 190 250 pf output capacitance c oss 60 75 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 10 13 pf switching parameters total gate charge q g 5.8 7.5 nc gate source charge q gs 1.4 nc gate drain charge q gd v gs =10v, v ds =80v, i d =7.3a (note 1,2) 2.5 nc turn-on delay time t d(on) 7 25 ns turn-on rise time t r 24 60 ns turn-off delay time t d(off) 13 35 ns turn-off fall-time t f v dd =50v, i d =7.3a, r g =25 ? (note 1,2) 19 50 ns
7n10 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-394.d ? electrical characteristics (cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics maximum continuous drain-source diode forward current i s 7 a maximum pulsed drain-source diode forward current i sm 16 a drain-source diode forward voltage v sd i s =7a, v gs =0v 1.5 v reverse recovery time t rr 70 ns reverse recovery charge q rr v gs =0v,i s =7.3a,di f /dt=100a/s 150 nc notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
7n10 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-394.d ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
7n10 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-394.d ? test circuits and waveforms (cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
7n10 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-394.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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